| PART |
Description |
Maker |
| 2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
| 2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
| GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 2SB1114 |
World standard miniature package. High DC current gain hFE=135 to 600.
|
TY Semiconductor Co., Ltd
|
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SA1436 |
High-hFE,AF Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC4705 |
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Applications (High hFE)(低频通用放大器应用的NPN硅外延平面型晶体 瑞展硅晶体管低频通用放大器，应用（高HFE的）（低频通用放大器应用的npn型硅外延平面型晶体管
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Applications (High hFE)
|
Sanyo Electric Co., Ltd.
|
| 2SC3808 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
